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STPS1545CT/CF/CG/CFP/CR
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 7.5 A 45 V 175 C 0.57 V
A1 K A2
FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED
s s s s s
A2 A1 K
A1
A2 K
TO-220AB STPS1545CT
ISOWATT220AB STPS1545CF
K
DESCRIPTION Dual center tap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters. Packaged either in TO-220AB, ISOWATT220AB, TO-220FPAB, D2PAK or I2PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
A2 A1
A2 K A1
D2PAK STPS1545CG
TO-220FPAB STPS1545CFP
A2 A1 K
I2PAK STPS1545CR
July 2003 - Ed: 5F
1/8
STPS1545CT/CF/CG/CFP/CR
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 TO-220AB / D PAK I2PAK ISOWATT220AB TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage
2
Parameter Repetitive peak reverse voltage Tc = 157C Tc = 130C tp = 10 ms Sinusoidal tp = 2 s square F = 1kHz tp = 100 s square tp = 1s Tj = 25C Per diode Per device
Value 45 20 7.5 15 150 1 2 2700 -65 to +175 175 10000
Unit V A A
A A A W C C V/s
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
Parameter Junction to case TO-220AB / D2PAK / I2PAK ISOWATT220AB / TO-220FPAB Per diode Total Per diode Total Coupling Value 3.0 1.7 5.5 4.2 0.35 2.9 Unit C/W
THERMAL RESISTANCES Symbol Rth (j-c)
Rth (c)
TO-220AB / D2PAK / I2PAK ISOWATT220AB / TO-220FPAB
When the diodes 1 and 2 are used simultaneously: Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25C Tj = 125C VF * Forward voltage drop Tj = 125C Tj = 25C Tj = 125C
Pulse test : * tp = 380 s, < 2%
Min.
Typ.
Max. 100
Unit A mA V
VR = VRRM 5 IF = 7.5 A IF = 15 A IF = 15 A 0.65 0.5
15 0.57 0.84 0.72
To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.020 IF2(RMS)
2/8
STPS1545CT/CF/CG/CFP/CR
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 6 5 4 3 2 1 IF(av) (A) 0 0 1 2 3 4 5 6 7
=tp/T
tp T
Fig. 2: Average current versus temperature (= 0.5, per diode).
IF(av)(A)
ambient
= 0.1 = 0.05
= 0.2
= 0.5
=1
8
9
10
9 8 7 6 5 4 3 2 1 0
Rth(j-a)=Rth(j-c) ISOWATT220AB TO-220FPAB Rth(j-a)=15C/W Rth(j-a)=40C/W
TO-220AB DPAK
T
=tp/T
tp
Tamb(C) 50 75 100 125 150 175
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1s)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 0 25 50 75 100 125 150
Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB and D2PAK).
IM(A) 120 100 80 60 40
IM
Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB).
IM(A) 80 70 60 50
Tc=50C Tc=100C
Tc=50C Tc=100C
40 30 20 10 0 1E-3
IM t
Tc=150C
t
Tc=150C
20 0 1E-3
=0.5
t(s) 1E-2 1E-1 1E+0
=0.5
t(s) 1E-2 1E-1 1E+0
3/8
STPS1545CT/CF/CG/CFP/CR
Fig. 6-1: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) (TO-220AB and D2PAK).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4
= 0.2 = 0.5
Fig. 6-2: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) (ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4
= 0.5
T
0.2
= 0.1
0.2
tp(s) 1E-3 1E-2
=tp/T
tp
= 0.2 = 0.1 Single pulse
T
Single pulse
tp(s) 1E-1
0.0 1E-4
1E-1
1E+0
0.0 1E-3
=tp/T
tp
1E-2
1E+0
1E+1
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode).
IR(A) 5E+4 1E+4 1E+3 1E+2 1E+1
Tj=25C Tj=150C Tj=125C Tj=100C Tj=75C Tj=50C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(pF) 1000
F=1MHz Tj=25C
500
200 VR(V) 1 2 5 10 20 50
1E+0 1E-1 VR(V) 0 5 10 15 20 25 30 35 40 45
100
Fig. 9: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A) 100.0
Tj=125C Typical values
Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35m).
Rth(j-a) (C/W) 80 70 60
10.0
Tj=25C
50 40
Tj=125C
1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
30 20 10 0 0 2 4 6 S(Cu) (cm) 8 10 12 14 16 18 20
4/8
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF.
A E L2 C2
Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0
Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8
A A1 A2
D
L L3 A1 B2 B G A2 C R
B B2 C C2 D E G L L2 L3
M
*
V2
M R V2
* FLAT ZONE NO LESS THAN 2mm
0.40 typ.
0.016 typ.
FOOTPRINT DIMENSIONS (in millimeters)
16.90
10.30 1.30
5.08
3.70 8.90
5/8
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA TO-220AB REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151
H2 Dia L5 C
A
L7 L6
L2 F2 F1 L9 L4 F G1 G M E D
A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam.
PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters
A H B
Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126
Dia L6 L2 L3 L5 D F1 L4 F2 L7
F G1 G
E
A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia.
Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20
6/8
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. 4.40 2.50 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 28.60 9.80 15.90 9.00 3.00 Max. 4.60 2.70 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 30.60 10.60 16.40 9.30 3.20 Inches Min. 0.173 0.098 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.394 1.125 0.386 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.646 0.366 0.126
16.00 typ.
0.630 typ.
7/8
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA I2PAK REF. Min.
A E L2 c2
DIMENSIONS Millimeters Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055
A A1 b b1 b2 c c2 D
4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27
D
L1 b2 L b1 b e
A1
e E L L1
c
L2
Type STPS1545CT STPS1545CF STPS1545CFP STPS1545CG
Marking STPS1545CT STPS1545CF STPS1545CFP STPS1545CG
Package TO-220AB ISOWATT220AB TO-220FPAB D2PAK D PAK I2PAK
2
Weight 2.23 g. 2.08 g. 2.0 g 1.48 g. 1.48 g. 1.49 g
Base qty 50 50 50 50 1000 50
Delivery mode Tube Tube Tube Tube Tape & reel Tube
STPS1545CG-TR STPS1545CG STPS1545CR
s
STPS1545CR
s
Cooling method: by conduction (C) Expoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8


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